To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰) High Q and high reliability and ceramic material. (高品质因素、高可靠性、陶瓷材质)
1.0
0.5
0.5
1.0nH ~ 120nH
150mA ~ 300mA
1
GSMF1608M8 (0603)
Multilayer Chip Inductors for High Frequency
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰) High Q and high reliability and ceramic material. (高品质因素、高可靠性、陶瓷材质)
1.6
0.8
0.8
1.0nH ~ 120nH
300mA
1
GSMI160808 (0603)
Multilayer Chip Inductors
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰)High Q and high reliability and ferrite material. (高品质因素、高可靠性、铁氧磁体材质)
1.6
0.8
0.8
0.1uH ~ 12uH
3mA ~ 50mA
2
GSMI1201209 (0805)
Multilayer Chip Inductors
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰)High Q and high reliability and ferrite material. (高品质因素、高可靠性、铁氧磁体材质)
2.0
1.25
0.85
0.1uH ~ 2.2uH
30mA ~ 250mA
2
GSMI201212 (0805)
Multilayer Chip Inductors
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰)High Q and high reliability and ferrite material. (高品质因素、高可靠性、铁氧磁体材质)
2.0
1.25
1.25
2.7uH ~ 33uH
5mA ~ 30mA
2
GSMI321611 (1206)
Multilayer Chip Inductors
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰)High Q and high reliability and ferrite material. (高品质因素、高可靠性、铁氧磁体材质)
3.2
1.6
1.1
0.1uH ~ 33uH
5mA ~ 250mA
2
GSPCLS2012
Multilayer Chip Inductors
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰)High Q and high reliability and ferrite material. (高品质因素、高可靠性、铁氧磁体材质)
2.0
1.25
0.9
0.47uH ~ 4.7uH
500mA ~ 1100mA
2
GSPCLS2016
Multilayer Chip Inductors
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰)High Q and high reliability and ferrite material. (高品质因素、高可靠性、铁氧磁体材质)
2.0
1.6
0.9
0.47uH ~ 4.7uH
1100mA ~ 1500mA
2
GSPCLS2520
Multilayer Chip Inductors
To prevent EMI interference noises between electronic circuits. (可降低噪音及滤波电磁干扰)High Q and high reliability and ferrite material. (高品质因素、高可靠性、铁氧磁体材质)
2.5
2.0
0.9
0.47uH ~ 6.8uH
1200mA ~ 1800mA
2
GSNL322522 (1210)
SMD Wirewound Chip Molded-Type Inductors
High resistance to heat and humidity.(高抗热及湿度) Resistant to mechanical shocks and pressures. (对于机械冲击或压力有良好之扺抗力)
3.2
2.5
2.2
0.1uH ~ 100uH
40mA ~ 450mA
6
GSNL453232 (1812)
SMD Wirewound Chip Molded-Type Inductors
High resistance to heat and humidity.(高抗热及湿度) Resistant to mechanical shocks and pressures. (对于机械冲击或压力有良好之扺抗力)
4.5
3.2
3.2
0.1uH ~ 1000uH
110mA ~ 800mA
6
GS565050V
SMD Wirewound Chip Molded-Type Inductors
High resistance to heat and humidity.(高抗热及湿度) Resistant to mechanical shocks and pressures. (对于机械冲击或压力有良好之扺抗力)
5.6
5.0
4.0
1.0uH ~ 10000uH
25mA ~ 1800mA
6
GS0402CS (1005)
SMD Wirewound Chip Open-Type Inductors
High frequency (高频)Highest possible SRFs as well as excellent Q values (高共振频率及高品质因素)The wire is wound directry on the ceramic core at a precision pitch (高精度绕线制品)
1.19
0.70
0.66
1.0nH ~ 120nH
50mA ~ 1360mA
7
GS0603CS (1608)
SMD Wirewound Chip Open-Type Inductors
High frequency (高频)Highest possible SRFs as well as excellent Q values (高共振频率及高品质因素)The wire is wound directry on the ceramic core at a precision pitch (高精度绕线制品)
1.80
1.20
1.02
1.6nH ~ 470nH
80mA ~ 700mA
7
GS0805CG
SMD Wirewound Chip Open-Type Inductors
High frequency (高频)Highest possible SRFs as well as excellent Q values (高共振频率及高品质因素)The wire is wound directry on the ceramic core at a precision pitch (高精度绕线制品)
2.29
1.73
1.52
2.2nH ~ 1000nH
150mA ~ 600mA
8
GS0805FS (2012)
SMD Wirewound Chip Open-Type Inductors
High frequency (高频)Highest possible SRFs as well as excellent Q values (高共振频率及高品质因素)The wire is wound directry on the ceramic core at a precision pitch (高精度绕线制品)
2.29
1.73
1.52
0.47uH ~ 10uH
80mA ~ 500mA
8
GS1008CG
SMD Wirewound Chip Open-Type Inductors
High frequency (高频)Highest possible SRFs as well as excellent Q values (高共振频率及高品质因素)The wire is wound directry on the ceramic core at a precision pitch (高精度绕线制品)
2.92
2.79
2.23
10nH ~ 10uH
100mA ~ 1000mA
9
GS1008FS (2520)
SMD Wirewound Chip Open-Type Inductors
High frequency (高频)Highest possible SRFs as well as excellent Q values (高共振频率及高品质因素)The wire is wound directry on the ceramic core at a precision pitch (高精度绕线制品)
2.92
2.79
2.23
1.0uH ~ 100uH
60mA ~ 245mA
9
GS4308I
RFID Transponder Coils
Low profile with an extended length. (超薄及加长型)High Q value. (高品质因素)
11.43
3.15
2.74
0.40mH ~ 8.10mH
10
GSAT1103
RFID Transponder Coils
Low profile with an extended length. (超薄及加长型)High Q value. (高品质因素)
11.8
4.5
3.0
0.25mH ~ 9.50mH
11
GSAT1503
RFID Transponder Coils
Low profile with an extended length. (超薄及加长型)High Q value. (高品质因素)
15.5
6.0
3.0
11
GSAT1514ZB
RFID ANTENNA
Low Freguency (LF) Transponder receiver.(低频率转发接收)Compact and thinner type Antenna.(轻便薄小天线线圈)
17.2
14.3
1.6
12
GSAT3D11
RFID ANTENNA
Low Freguency (LF) Transponder receiver.(低频率转发接收)Compact and thinner type Antenna.(轻便薄小天线线圈)
13.5
12.5
12.5
3.3mH ~ 7.30mH
13
GSAT3D11C
RFID ANTENNA
Low Freguency (LF) Transponder receiver.(低频率转发接收)Compact and thinner type Antenna.(轻便薄小天线线圈)
14.5
13.5
2.4mH ~ 7.20mH
13
GSAT3D15
RFID ANTENNA
Low Freguency (LF) Transponder receiver.(低频率转发接收)Compact and thinner type Antenna.(轻便薄小天线线圈)
17.5
15.5
15.5
2.47mH ~ 10mH
13
GSAT3D15C
RFID ANTENNA
Low Freguency (LF) Transponder receiver.(低频率转发接收)Compact and thinner type Antenna.(轻便薄小天线线圈)
17.5
16.5
4.8mH ~ 7.20mH
13
GSAM0805
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
1.80
2.10
2.85
3.9nH ~ 33nH
500mA ~ 1200mA
14
GSAM1008
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
1.90
2.20
3.20
6.8nH ~ 39nH
500mA ~ 1200mA
14
GSAM1812
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
4.70
3.70
3.50
22nH ~ 120nH
2.2A ~ 3.2A
15
GSAM2215
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
2.2
1.4
1.4
1.65nH ~ 5.45nH
15
GSAM4015
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
4.0
1.5
1.5
5.60nH ~ 12.55nH
15
GSAM132
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
9.0
4.5
4.6
90nH ~ 538nH
15
GSAM3730
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
3.30
2.50
2.60
2.5nH ~ 18.5nH
15
GSAM7030
SMD Flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因素)The constitutive property is good and easy to operate (结构性佳、使用方便)
6.00
2.50
2.60
17.5nH ~ 43.5nH
15
GSAD
SMD Non-flat Top Air Core Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)
16
GSPWC0805ST
SMD Common Mode EMI Filters
Effective in high frequency noise suppression(高频之杂讯抑制对策佳)The common mode choke coil structure and without degrading the signal(共模扼流线圈结构,讯号不衰减)Small Size, Easy to use(体积小、使用方便)
2.0
1.2
1.2
25Ω ~ 2200Ω
17
GSPWC1206ST
SMD Common Mode EMI Filters
Effective in high frequency noise suppression(高频之杂讯抑制对策佳)The common mode choke coil structure and without degrading the signal(共模扼流线圈结构,讯号不衰减)Small Size, Easy to use(体积小、使用方便)
3.2
1.6
1.9
50Ω ~ 2200Ω
17
GSPWC4532ST (FOR Impedance)
SMD Common Mode EMI Filters
Effective in high frequency noise suppression(高频之杂讯抑制对策佳)The common mode choke coil structure and without degrading the signal(共模扼流线圈结构,讯号不衰减)Small Size, Easy to use(体积小、使用方便)
4.5
3.2
2.8
600Ω ~ 1400Ω
20
GSPWC4532ST (FOR Inductance)
SMD Common Mode EMI Filters
Effective in high frequency noise suppression(高频之杂讯抑制对策佳)The common mode choke coil structure and without degrading the signal(共模扼流线圈结构,讯号不衰减)Small Size, Easy to use(体积小、使用方便)
4.5
3.2
2.8
11uH ~ 100uH
17
GSPWC7060ST
SMD Common Mode EMI Line Filters
Capable of handling the highest current(up to 5A) of any chip-type common mode filter (可有效处理任何电流达5A以上的基层式共模滤波器)Noise is greatly suppressed (有效抑制杂讯)
7.3
6.0
3.8
300Ω ~ 1300Ω
18
GSPWC9070ST
SMD Common Mode EMI Line Filters
Capable of handling the highest current(up to 5A) of any chip-type common mode filter (可有效处理任何电流达5A以上的基层式共模滤波器)Noise is greatly suppressed (有效抑制杂讯)
9.0
7.0
4.5
300Ω ~ 1500Ω
18
GSPWC1211ST
SMD Common Mode EMI Line Filters
Capable of handling the highest current(up to 5A) of any chip-type common mode filter (可有效处理任何电流达5A以上的基层式共模滤波器)Noise is greatly suppressed (有效抑制杂讯)
12.0
10.8
6.4
700Ω ~ 1000Ω
18
GSEF505085
SMD Common Mode EMI Line Filters
Closed magnetic circuit for lowest EMI (闭合磁性电路防EMI干扰对策)Common mode for DC power lines (共模DC直流电端端应用)Dual-winding configuration makes 1 unit suffice for one port (双组绕线在一个磁芯上的特点)
5.0
8.5
5.0
19
GSEF763206
SMD Common Mode EMI Line Filters
Closed magnetic circuit for lowest EMI (闭合磁性电路防EMI干扰对策)Common mode for DC power lines (共模DC直流电端端应用)Dual-winding configuration makes 1 unit suffice for one port (双组绕线在一个磁芯上的特点)
6.0
7.6
3.2
19
GSEF100805
SMD Common Mode EMI Line Filters
Closed magnetic circuit for lowest EMI (闭合磁性电路防EMI干扰对策)Common mode for DC power lines (共模DC直流电端端应用)Dual-winding configuration makes 1 unit suffice for one port (双组绕线在一个磁芯上的特点)
8.0
10.0
5.0
19
GSEF121006
SMD Common Mode EMI Line Filters
Closed magnetic circuit for lowest EMI (闭合磁性电路防EMI干扰对策)Common mode for DC power lines (共模DC直流电端端应用)Dual-winding configuration makes 1 unit suffice for one port (双组绕线在一个磁芯上的特点)
10.0
12.0
6.0
19
GSB4F
SMD Common Mode Choke Coils
Pair wire coil for high stability. (使用双线并绕方式平衡度更佳)
5.5
4.5
3.5
20
GSB5FL
SMD Common Mode Choke Coils
Pair wire coil for high stability. (使用双线并绕方式平衡度更佳)
6.5
6.5
3.9
20
GSD4006
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)
5.8
6.3
0.8
2.2uH ~ 47uH
0.18A ~ 0.95A
21
GSD4008
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)
5.8
6.3
1.0
3.3uH ~ 100uH
0.17A ~ 0.85A
21
GSD4011
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)
4.4
5.8
1.20
2.2uH ~ 47uH
0.18A ~ 0.95A
22
GSD4013
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)
4.4
5.8
1.45
3.3uH ~ 100uH
0.17A ~ 0.85A
22
GSD5011
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)
5.8
7.4
1.2
3.3uH ~ 100uH
0.20A ~ 0.94A
23
GSD5013
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)
5.8
7.4
1.5
3.3uH ~ 47uH
0.35A ~ 1.25A
25
GSD4009C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (薄型结构)Large Current and Low DCR (大电流低直流阻抗)
4.9
4.9
1.0
4.7uH ~ 22uH
0.35A ~ 0.80A
24
GSD4011C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (薄型结构)Large Current and Low DCR (大电流低直流阻抗)
4.9
4.9
1.2
3.3uH ~ 33uH
0.30A ~ 1.0A
25
GSD4014C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (薄型结构)Large Current and Low DCR (大电流低直流阻抗)
4.9
4.9
1.5
4.7uH ~ 47uH
0.30A ~ 0.90A
24
GSD7011C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (薄型结构)Large Current and Low DCR (大电流低直流阻抗)
7.3
7.3
1.2
4.7uH ~ 22uH
0.7A ~ 1.6A
25
GSD7014C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (薄型结构)Large Current and Low DCR (大电流低直流阻抗)
7.3
7.3
1.5
3.3uH ~ 22uH
0.9A ~ 2.1A
25
GSD7026C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (薄型结构)Large Current and Low DCR (大电流低直流阻抗)
7.3
7.3
2.8
2.2uH ~ 68uH
0.8A ~ 4A
25
GSD1014C
SMT Shielded Power Inductors
Magnetically shielded construction (閉磁路構造設計)Low Profile (薄型結構)Large Current and Low DCR (大電流低直流阻抗)
10.3
10.3
1.5
2.2uH ~ 47uH
0.85A ~ 3.5A
25
GSD7011F
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (扁平化设计)Low cost (低价格)
7.2
7.2
1.20
4.7uH ~ 22uH
0.90A ~ 2.00A
26
GSD7015F
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (扁平化设计)Low cost (低价格)
7.2
7.2
1.50
2.2uH ~ 47uH
0.50A ~ 2.50A
26
GSD8026F
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (扁平化设计)Low cost (低价格)
8.5(max)
9.0(max)
2.85
6.8mH ~ 67mH
20mA ~ 120mA
26
GSD73C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)For large currents (适合大电流)
7.4
7.4
3.5
1.0uH ~ 1000uH
0.1A ~ 3.12A
27
GSD75C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)For large currents (适合大电流)
7.4
7.4
5.1
1.0uH ~ 1000uH
0.17A ~ 2.88A
27
GSD73F
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)For large currents. (适合大电流)
7.4
7.4
3.5
1.0uH ~ 100uH
0.38A ~ 2.88A
28
GSD75F
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)For large currents. (适合大电流)
7.4
7.4
5.1
1.0uH ~ 1000uH
0.150A ~ 2.880A
28
GSD62LCBN
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.9
6.2
2.0
1.0uH ~ 47uH
0.5A ~ 3.5A
29
GSD62CBN
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.9
6.2
2.5
1.0uH ~ 100uH
0.33A ~ 3.48A
29
GSD63LCBN
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.9
6.2
3.0
1.0uH ~ 150uH
0.31A ~ 3.59A
29
GSD63CBN
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.9
6.2
3.5
2.0uH ~ 150uH
0.37A ~ 3.00A
29
GSD7018F
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)Low cost (低价格)
7.0
7.0
1.8
2.2uH ~ 47uH
0.8A ~ 2.7A
30
GSD7025F
SMT Unshielded Power Inductors
Open Magnetic circuit construction(开磁路构造设计)Low Profile (薄型结构)Low cost (低价格)
7.0
7.0
2.50
2.2uH ~ 47uH
1.0A ~ 3.7A
30
GSD5409PE
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (薄型结构)Low cost (低价格)
5.6
5.6
1.00
3.3uH ~ 47uH
0.35A ~ 1.30A
31
GSDS104C2
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
10.4
4.8
3.0
1.1uH ~ 120uH
0.97A ~ 11.7A
32
GSDS106C2
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
10.4
6.8
3.0
1.1uH ~ 680uH
0.47A ~ 7.00A
32
GSDS126C2
SMT Shielded Power Inductors
MMagnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.8
6.8
3.0
1.7uH ~ 680uH
0.55A ~ 11.8A
32
GSRH2D09A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
3.2
3.2
1.00
1.2uH ~ 10uH
0.28A ~ 0.80A
33
GSRH2D11A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
3.2
3.2
1.20
1.5uH ~ 10uH
0.65A ~ 1.48A
33
GSRH2D14A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
3.2
3.2
1.55
1.5uH ~ 12uH
0.620A ~ 1.800A
33
GSRH2D18A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
3.2
3.2
2.00
2.2uH ~ 33uH
0.23A ~ 0.85A
33
GSRH3D11A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.2
2.7uH ~ 39uH
0.14A ~ 0.53A
33
GSRH3D14ALD
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.5
1.2uH ~ 47uH
0.250A ~ 1.500A
33
GSRH3D14AHP
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.5
1.5uH ~ 22uH
0.65A ~ 2.60A
33
GSRH3D16A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.8
1.5uH ~ 33uH
0.32A ~ 1.55A
33
GSRH3D28A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
3.0
3.3uH ~ 47uH
0.48A ~ 2.00A
33
GSRH3D28ALD
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
3.0
10uH ~ 220uH
0.116A ~ 0.500A
33
GSRH2D11
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
3.2
3.2
1.30
1.5uH ~ 10uH
0.35A ~ 0.90A
34
GSRH2D14
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
3.2
3.2
1.55
1.5uH ~ 12uH
0.620A ~ 1.800A
34
GSRH2D18
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
3.2
3.2
2.00
2.2uH ~ 33uH
0.23A ~ 0.85A
34
GSRH3D11
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.2
2.7uH ~ 39uH
0.14A ~ 0.53A
34
GSRH3D14LD
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.5
1.2uH ~ 47uH
0.250A ~ 1.500A
34
GSRH3D14HP
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.5
1.5uH ~ 22uH
0.65A ~ 2.60A
34
GSRH3D16
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
1.8
1.5uH ~ 33uH
0.32A ~ 1.55A
34
GSRH3D28
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.0
4.0
3.0
3.3uH ~ 47uH
0.48A ~ 2.00A
34
GSRH4D18
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.7
4.7
2.0
1.0uH ~ 180uH
0.14A ~ 1.72A
35
GSRH4D28
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.7
4.7
3.0
1.2uH ~ 390uH
0.13A ~ 2.56A
35
GSRH5D18
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
5.7
5.7
2.0
4.1uH ~ 330uH
0.18A ~ 1.95A
35
GSRH5D28
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
5.7
5.7
3.0
2.6uH ~ 680uH
0.16A ~ 2.60A
35
GSRH6D28
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.7
6.7
3.0
3.0uH ~ 680uH
0.20A ~ 3.00A
35
GSRH6D38
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.7
6.7
4.0
3.3uH ~ 1000uH
0.20A ~ 3.50A
35
GSRH6D18C
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Low Profile (扁平化设计)Large Current and Low DCR (大电流低直流阻抗)
6.7
6.7
2.0
2.2uH ~ 47uH
0.7A ~ 3.2A
36
GSRH8D28
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
8.3
8.3
3.0
2.5uH ~ 100uH
0.75A ~ 4.50A
37
GSRH8D43
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
8.3
8.3
4.5
2.0uH ~ 100uH
1.30A ~ 7.00A
37
GSRH62BS
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.2
5.9
3.0
2.90uH ~ 330uH
0.19A ~ 1.94A
38
GSRH64BS
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.2
5.9
5.0
2.90uH ~ 1000uH
0.14A ~ 1.80A
38
GSRH103R
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Wire burst resistant due to special construction. (断线对策构造)
10.3
10.4
3.0
10uH ~ 150uH
0.70A ~ 2.70A
39
GSRH104R
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Wire burst resistant due to special construction. (断线对策构造)
10.3
10.4
4.0
1.3uH ~ 330uH
0.70A ~ 10.00A
39
GSRH105R
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Wire burst resistant due to special construction. (断线对策构造)
10.3
10.4
5.0
10uH ~ 1000uH
0.42A ~ 4.45A
39
GSRH73
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
7.5
7.5
3.4
10uH ~ 1000uH
0.16A ~ 1.68A
40
GSRH74
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
7.5
7.5
4.5
10uH ~ 1000uH
0.18A ~ 1.84A
40
GSRH124
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.3
12.3
4.5
3.9uH ~ 330uH
0.50A ~ 6.50A
41
GSRH125
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.3
12.3
6.0
1.3uH ~ 1000uH
0.40A ~ 8.00A
41
GSRH127
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.3
12.3
8.0
1.2uH ~ 1000uH
0.55A ~ 9.80A
41
GSRH129
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
10.0
1.5uH ~ 1000uH
0.76A ~ 16.0A
41
GSRH124A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.3
12.3
5.2
3.90uH ~ 330uH
0.50A ~ 6.50A
42
GSRH125A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.3
12.3
6.0
1.3uH ~ 1000uH
0.40A ~ 8.00A
42
GSRH127A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.3
12.3
8.0
1.2uH ~ 1000uH
0.55A ~ 9.80A
42
GSRH129A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
10.0
1.5uH ~ 1000uH
0.76A ~ 16.0A
42
GSRH124B
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
4.7
43
GSRH125B
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
6.2
43
GSRH127B
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
8.0
43
GSRH129B
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
10.0
43
GSRH124BA
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
4.7
44
GSRH125BA
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
6.2
44
GSRH127BA
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
8.0
44
GSRH129BA
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.2
12.2
10.0
44
GSR63B
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
5.90
6.50
3.50
10uH ~ 68uH
0.42A ~ 1.00A
45
GSR74B
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
7.35
8.15
4.90
10uH ~ 270uH
0.33A ~ 1.65A
45
GSR105B
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
9.40
10.40
5.50
10uH ~ 470uH
0.33A ~ 2.06A
45
GSLQ201610
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
2.0
1.6
1.0
46
GSLQ252010
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
2.5
2.0
1.0
46
GSLQ252012
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
2.5
2.0
1.2
46
GSLQ303010
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
3.0
3.0
1.0
46
GSLQ303012
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
3.0
3.0
1.2
46
GSLQ303015
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
3.0
3.0
1.5
46
GSLQ404010
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
4.0
4.0
1.0
46
GSLQ404012
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
4.0
4.0
1.2
46
GSLQ404018
SMD Shielded Power Inductors
High frequency (高频)Highest possible SRF as well as excellent Q values (高共振频率及高品质因数)The constitutive property is good and easy to operate (结构性佳、使用方便)
4.0
4.0
1.8
46
GSDIA5020
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
5.0
5.0
2.0
47
GSDIA5030
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
5.0
5.0
3.0
47
GSDIA5040
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
5.0
5.0
4.0
47
GSDIA6028
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.0
6.0
2.8
47
GSDIA6045
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.0
6.0
4.5
47
GSDIA8040
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
8.0
8.0
4.0
47
GSCR6045
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.0
6.0
4.5
2.2uH ~ 100uH
0.8A ~ 6.0A
47
GSCR8040
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
8.0
8.0
4.5
4.7uH ~ 100uH
1.0A ~ 4.7A
47
GS3011
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
3.0
3.5
1.2(max)
1.0uH ~ 100uH
0.20A ~ 1.14A
48
GS32
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
3.0
3.5
2.3(max)
1.0uH ~ 330uH
0.09A ~ 2.20A
48
GS43
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
4.0
4.5
3.2
1.0uH ~ 1000uH
0.14A ~ 3.80A
48
GS5019
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
5.2
5.8
1.9(max)
1.0uH ~ 270uH
0.16A ~ 3.00A
48
GS52
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
5.2
5.8
2.5
1.2uH ~ 470uH
0.15A ~ 4.20A
48
GS53
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
5.2
5.8
3.0
1.0uH ~ 1000uH
0.13A ~ 4.50A
48
GS54
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
5.2
5.8
4.5
1.0uH ~ 1000uH
0.14A ~ 5.90A
48
GS73
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
7.0
7.8
3.5
10uH ~ 1000uH
0.08A ~ 1.44A
48
GS75
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
7.0
7.8
5.0
10uH ~ 1000uH
0.20A ~ 2.30A
48
GS104
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
9.0
10.0
4.0
10uH ~ 1000uH
0.29A ~ 2.38A
48
GS105
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Put the electrode with ferrite core directly, a small surface area allow a high mounting density. (直接电极设计、降低零件高度)
9.0
10.0
5.4
10uH ~ 1000uH
0.20A ~ 2.60A
48
GSSLF6028
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
6.2
6.2
3.0
10uH ~ 330uH
0.19A ~ 1.10A
49
GSSLF7028A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
7.0
7.0
2.8
3.3uH ~ 47uH
0.54A ~ 1.6A
50
GSSLF7045A
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
7.0
7.0
4.5
3.3uH ~ 1000uH
0.14A ~ 2.50A
50
GSSLF10145
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
10.1
10.1
4.5
10uH ~ 1500uH
0.22A ~ 3.00A
51
GSSLF12555
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.5
12.5
5.5
6.0uH ~ 1500uH
0.29A ~ 3.60A
51
GSSLF12565
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.5
12.5
6.5
2.0uH ~ 220uH
1.0A ~ 10A
51
GSSLF12575
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
12.5
12.5
7.5
1.2uH ~ 220uH
1.3A ~ 13A
51
GS3316DC
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)
12.95
9.40
5.08
1.0uH ~ 47uH
1.00A ~ 5.60A
53
GS5022DC
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流及低直流阻抗)
18.54
15.24
7.62
10uH ~ 1000uH
0.80A ~ 8.00A
54
GS1608DF
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)
6.60
4.45
2.92
1.0uH ~ 1000uH
0.10A ~ 2.90A
55
GS3308DF
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Mn-Zn material core (锰锌材之铁芯)Available in various sizes (多种尺寸可供选择)
12.95
9.40
3.00
10uH ~ 1000uH
0.10A ~ 2.40A
56
GS3316DF
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Mn-Zn material core (锰锌材之铁芯)Available in various sizes (多种尺寸可供选择)
12.95
9.40
5.21
1.0uH ~ 1000uH
0.30A ~ 9.00A
56
GS3340DF
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Mn-Zn material core (锰锌材之铁芯)Available in various sizes (多种尺寸可供选择)
12.95
9.40
11.43
10uH ~ 1000uH
0.80A ~ 8.00A
56
GS5022DF
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Mn-Zn material core (锰锌材之铁芯)Available in various sizes (多种尺寸可供选择)
18.54
15.24
7.11
1.0uH ~ 1000uH
1.00A ~ 20.00A
56
GS1813DHP
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)Less than 4.7mm high. (高度4.7mm以下)Large current and very low DCR.(大电流及超低阻抗)
9.10
6.10
4.70
0.56uH ~ 47uH
0.87A ~ 7.70A
57
GS3316DHP
SMT Unshielded Power Inductors
Open Magnetic circuit construction (開磁路構造設計)Compact and thin (輕便薄小)Mn-Zn material core (錳鋅材之鐵芯)Self-leaded construction (直接線端之構造)
13.21
9.91
6.35
0.33uH ~ 4.7uH
5.40A ~ 20.00A
58
GS5022DHP
SMT Unshielded Power Inductors
Open Magnetic circuit construction (开磁路构造设计)Compact and thin (轻便薄小)8mm high for large current and low DCR.(高度低于8mm、大电流低直流阻抗)Self-leaded construction (直接线端之构造)
22.35
16.26
8.00
0.78uH ~ 15uH
8.00A ~ 30.00A
59
GSMPI0402N
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.7
4.0
2.0
0.22uH ~ 5.6uH
3.5A ~ 11.5A
60
GSMPI0703N
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
7.6
6.5
3.0
0.22uH ~ 8.2uH
5.0A ~34.0A
60
GSMPI0735N
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
7.6
6.5
3.5
10.00uH
5.5A
60
GSMPI1004N
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
11.5
10.0
4.0
0.22uH ~ 10.00uH
9.0A ~54.0A
60
GSMPC0402CA
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
4.4
4.2
2.0
0.22uH ~ 10.00uH
2.2A ~21.0A
60
GSMPC0703CA
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
7.3
6.6
3.0
0.22uH ~ 33.00uH
3.0A ~42.0A
60
GSMPC1004CA
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin (轻便薄小)Large Current and Low DCR (大电流低直流阻抗)
11.5
10.0
3.8
0.15uH ~ 47.00uH
4.3A ~75.0A
60
GSTX-2P
SMT Toroidal Power Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)Maximum Power density (最大功率密度)With Powdered Iron cores & Low cost(设计为铁粉芯及低价格)
9.00
11.60
5.96
0.54uH ~ 300.42uH
0.42A ~5.90A
61
GSTX-4P
SMT Toroidal Power Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)Maximum Power density (最大功率密度)With Powdered Iron cores & Low cost(设计为铁粉芯及低价格)
11.40
14.40
7.00
0.49uH ~ 298.93uH
0.54A ~7.90A
61
GS68HC
SMT Toroidal Coil Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High Current. (高电流)
24.0
24.0
9.6
62
GS302
SMT Toroidal Coil Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High Current. (高电流)
10.0
8.6
6.2
63
GS502
SMT Toroidal Coil Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High Current. (高电流)
15.7
13.2
9.7
63
GS1051
SMT Toroidal Coil Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High Current. (高电流)
31.0
22.6
12.2
63
GS302A
SMT Toroidal Coil Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防EMI干扰对策)High Current (高电流)Compatible with vapor phase and infrared reflow soldering(应用于气相及红外式回流焊锡)
10.0
8.6
6.2
64
GS502A
SMT Toroidal Coil Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High Current (高电流)Compatible with vapor phase and infrared reflow soldering(应用于气相及红外式回流焊锡)
15.8
13.2
7.7
64
GSSHD01
SMT Toroidal Power Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High performance low loss powder iron core is excellent for high frequency applications(高性能低损失之铁芯运用于高频佳)Compatible with vapor phase and infrared reflow soldering (应用于气相及红外式回流焊锡)
15.4
14.5
8.80
65
GSSHD02
SMT Toroidal Power Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High performance low loss powder iron core is excellent for high frequency applications(高性能低损失之铁芯运用于高频佳)Compatible with vapor phase and infrared reflow soldering (应用于气相及红外式回流焊锡)
15.7
15.3
9.40
65
GSSHD03
SMT Toroidal Power Inductors
Closed magnetic circuit for lowest EMI (闭合磁性电路防干扰对策)High performance low loss powder iron core is excellent for high frequency applications(高性能低损失之铁芯运用于高频佳)Compatible with vapor phase and infrared reflow soldering (应用于气相及红外式回流焊锡)
14.2
14.1
8.80
65
GS0950
SMT Toroidal Coil Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin(轻便薄小)High quality toroidal core(高品质环型磁芯)Low profile common mode choke(薄型共模抗流线圈)
9.5
6.0
5.2
470uH ~ 4700uH
180mA ~220mA
66
GS0950A
SMT Toroidal Coil Inductors
Magnetically shielded construction (闭磁路构造设计)Compact and thin(轻便薄小)High quality toroidal core(高品质环型磁芯)Low profile common mode choke(薄型共模抗流线圈)
9.5
6.0
5.2
0.5uH ~ 10.0uH
1.0A ~5.5A
66
GS1608DC
SMT Shielded Power Inductors
Magnetically shielded construction (闭磁路构造设计) Compact and thin (轻便薄小) DCR is lower than other inductors 10%~60% (直流阻抗比其他型式低于10%~60%) High breakdown voltage (高击穿电压) 铁芯与线有良好之绝缘阻抗